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| MRF448 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF448 is Designed for High Linearity Class AB HF Power Amplifier Applications up to 30 MHz. PACKAGE STYLE .500 4L FLG .112x45 A FULL R L FEATURES: * PG = 14 dB Typical at 220 W/30 MHz * IMD3 = -32 dBc Typ. at 220 W(PEP) * OmnigoldTM Metalization System C B E C O.125 NOM. B E H D G F E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC 16 A 100 V 50 V 4.0 V 290 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.6 C/W DIM A B C D E F G H I J K L .980 / 24.89 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .245 / 6.22 .720 / 18.28 .125 / 3.18 MINIMUM inches / mm IJ K MAXIMUM inches / mm .220 / 5.59 .125 / 3.18 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67 ORDER CODE: ASI10866 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICEO ICES hFE Cob GP C IMD C TC = 25 C NONETEST CONDITIONS IC = 100 mA IC = 200 mA IE = 10 mA VCE = 30 V VCE = 50 V VCE = 10 V VCB = 50 V IC = 5.0 A f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 100 50 4.0 5 10 10 350 12 65 -33 45 -30 450 UNITS V V V mA mA --pF dB % dB % VCE = 50 V VCE = 50 V ICQ =250 mA ICQ =250 mA POUT = 250 W(CW) POUT = 250 W(PEP) A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1 |
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